onsemi PowerTrench Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin PQFN8 FDMS7608S

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
166-3512
Mfr. Part No.:
FDMS7608S
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A, 30 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN8

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ, 13.9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.2 W, 2.5 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18 nC @ 10 V, 21 nC @ 10 V

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Width

6mm

Height

0.725mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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