onsemi PowerTrench Dual N-Channel MOSFET, 12 A, 40 V, 8-Pin Power 33 FDMC8030

Save 41% when you buy 1500 units

Subtotal (1 pack of 5 units)*

£7.73

(exc. VAT)

£9.275

(inc. VAT)

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Last RS stock
  • 385 left, ready to ship
  • Final 2,150 unit(s) shipping from 08 October 2025
Units
Per unit
Per Pack*
5 - 25£1.546£7.73
30 - 145£1.382£6.91
150 - 745£1.22£6.10
750 - 1495£1.052£5.26
1500 +£0.902£4.51

*price indicative

Packaging Options:
RS Stock No.:
806-3504
Mfr. Part No.:
FDMC8030
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

40 V

Series

PowerTrench

Package Type

Power 33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

12 nC @ 5 V, 21 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

3mm

Length

3mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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