onsemi Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin SOIC FDS8984
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£2.24
(exc. VAT)
£2.69
(inc. VAT)
FREE delivery for orders over £50.00
- 2,430 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.448 | £2.24 |
50 - 95 | £0.386 | £1.93 |
100 - 495 | £0.334 | £1.67 |
500 - 995 | £0.294 | £1.47 |
1000 + | £0.268 | £1.34 |
*price indicative
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 7 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 23 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
Number of Elements per Chip | 2 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Dual N-Channel MOSFET 30 V, 8-Pin SOIC FDS8984
- onsemi Dual N-Channel MOSFET 30 V, 8-Pin SOIC NTMD4N03R2G
- onsemi Dual N/P-Channel MOSFET 7 A 8-Pin ECH ECH8661-TL-H
- onsemi Dual N-Channel MOSFET 60 V, 8-Pin SOIC NDS9945
- onsemi Dual N-Channel MOSFET 40 V, 8-Pin SOIC FDS8949
- onsemi Dual N/P-Channel MOSFET 3.9 A 8-Pin SOIC SI4532DY
- onsemi Dual N-Channel MOSFET 8-Pin SOIC NCP81075DR2G
- onsemi Dual N-Channel MOSFET 30 V, 8-Pin ECH ECH8663R-TL-H