onsemi N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK RFD3055LESM9A

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Subtotal (1 reel of 2500 units)*

£447.50

(exc. VAT)

£537.50

(inc. VAT)

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2500 +£0.179£447.50

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RS Stock No.:
166-3195
Mfr. Part No.:
RFD3055LESM9A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

107 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

9.4 nC @ 10 V

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.39mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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