N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK onsemi RFD3055LESM9A

RS Stock No.:: 166-3195
Mfr. Part No.:: RFD3055LESM9A
Brand:: onsemi

N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK onsemi RFD3055LESM9A

520 In stock - FREE next working day delivery available

Price Each (On a Reel of 2500)

£0.224

(exc. VAT)

£0.269

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.224	£560.00

*price indicative

RS Stock No.:: 166-3195
Mfr. Part No.:: RFD3055LESM9A
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	107 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Width	6.22mm
Typical Gate Charge @ Vgs	9.4 nC @ 10 V
Length	6.73mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Height	2.39mm
Minimum Operating Temperature	-55 °C