STMicroelectronics MDmesh II N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- RS Stock No.:
- 151-951
- Mfr. Part No.:
- STD13NM60N
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 151-951
- Mfr. Part No.:
- STD13NM60N
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | MDmesh II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Width | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series MDmesh II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Width 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Related links
- STMicroelectronics MDmesh II N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- STMicroelectronics MDmesh II N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP STF13NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP13NM60N
- STMicroelectronics MDmesh N-Channel MDmesh II Power MOSFET 500 V Enhancement, 3-Pin TO-263 STB23NM50N
- STMicroelectronics Single MDmesh 1 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP STF13NM60N
- STMicroelectronics MDmesh M5 N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252 STD15N65M5