STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

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Subtotal (1 reel of 2500 units)*

£1,882.50

(exc. VAT)

£2,260.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.753£1,882.50

*price indicative

RS Stock No.:
188-8287
Mfr. Part No.:
STD13N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

11 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

6.2mm

Maximum Operating Temperature

+150 °C

Length

6.6mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Height

2.17mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications

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