STMicroelectronics N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD15N60DM6
- RS Stock No.:
- 210-8742
- Mfr. Part No.:
- STD15N60DM6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.27
(exc. VAT)
£11.125
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.854 | £9.27 |
50 - 95 | £1.584 | £7.92 |
100 - 245 | £1.238 | £6.19 |
250 - 995 | £1.216 | £6.08 |
1000 + | £0.904 | £4.52 |
*price indicative
- RS Stock No.:
- 210-8742
- Mfr. Part No.:
- STD15N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 338 mΩ | |
Maximum Gate Threshold Voltage | 4.75V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 338 mΩ | ||
Maximum Gate Threshold Voltage 4.75V | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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