STMicroelectronics Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-252 STD80N340K6
- RS Stock No.:
- 261-5527
- Mfr. Part No.:
- STD80N340K6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.48
(exc. VAT)
£7.78
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 292 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.24 | £6.48 |
| 10 - 98 | £2.915 | £5.83 |
| 100 - 248 | £2.625 | £5.25 |
| 250 - 498 | £2.36 | £4.72 |
| 500 + | £2.12 | £4.24 |
*price indicative
- RS Stock No.:
- 261-5527
- Mfr. Part No.:
- STD80N340K6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET on super junction technology. Features best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100% avalanche tested
Zener-protected
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