STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

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Subtotal (1 reel of 2500 units)*

£1,632.50

(exc. VAT)

£1,960.00

(inc. VAT)

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2500 +£0.653£1,632.50

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RS Stock No.:
188-8289
Mfr. Part No.:
STD5N80K5
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

4 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.73 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.2mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Length

6.6mm

Forward Diode Voltage

1.5V

Height

2.17mm

Minimum Operating Temperature

-55 °C

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications

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