STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 4.3 A, 800 V, 3-Pin TO-220 STP5NK80Z
- RS Stock No.:
- 687-5358
- Mfr. Part No.:
- STP5NK80Z
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£9.22
(exc. VAT)
£11.065
(inc. VAT)
FREE delivery for orders over £50.00
- 50 unit(s) ready to ship
- Plus 35 unit(s) ready to ship from another location
- Plus 10 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 5 | £1.844 | £9.22 |
10 - 20 | £1.658 | £8.29 |
25 - 95 | £1.564 | £7.82 |
100 - 495 | £1.228 | £6.14 |
500 + | £1.04 | £5.20 |
*price indicative
- RS Stock No.:
- 687-5358
- Mfr. Part No.:
- STP5NK80Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.3 A | |
Maximum Drain Source Voltage | 800 V | |
Series | MDmesh, SuperMESH | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.4 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.6mm | |
Typical Gate Charge @ Vgs | 32.4 nC @ 10 V | |
Length | 10.4mm | |
Maximum Operating Temperature | +150 °C | |
Height | 9.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.3 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 32.4 nC @ 10 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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