STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.2 A, 800 V, 3-Pin TO-220 STP7NK80Z
- RS Stock No.:
- 920-6626
- Mfr. Part No.:
- STP7NK80Z
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£59.25
(exc. VAT)
£71.10
(inc. VAT)
FREE delivery for orders over £50.00
- 1,900 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.185 | £59.25 |
100 - 450 | £0.925 | £46.25 |
500 - 950 | £0.785 | £39.25 |
1000 - 4950 | £0.655 | £32.75 |
5000 + | £0.616 | £30.80 |
*price indicative
- RS Stock No.:
- 920-6626
- Mfr. Part No.:
- STP7NK80Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.2 A | |
Maximum Drain Source Voltage | 800 V | |
Series | MDmesh, SuperMESH | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.8 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Width | 4.6mm | |
Transistor Material | Si | |
Length | 10.4mm | |
Height | 9.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 4.6mm | ||
Transistor Material Si | ||
Length 10.4mm | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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