STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 800 V, 3-Pin TO-220 STP13N80K5
- RS Stock No.:
- 791-7807
- Mfr. Part No.:
- STP13N80K5
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£14.47
(exc. VAT)
£17.365
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £2.894 | £14.47 |
*price indicative
- RS Stock No.:
- 791-7807
- Mfr. Part No.:
- STP13N80K5
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 | |
| Series | MDmesh K5, SuperMESH5 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 450 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 | ||
Series MDmesh K5, SuperMESH5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Width 4.6mm | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 15.75mm | ||
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