STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

£2,060.00

(exc. VAT)

£2,472.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.824£2,060.00

*price indicative

RS Stock No.:
210-8739
Mfr. Part No.:
STD12N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

90W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

6.6mm

Height

2.4mm

Width

6.2 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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