STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP11NM60ND
- RS Stock No.:
- 760-9982
- Mfr. Part No.:
- STP11NM60ND
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£1.68
(exc. VAT)
£2.02
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 21 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £1.68 |
| 10 - 99 | £1.42 |
| 100 - 499 | £1.14 |
| 500 - 999 | £1.06 |
| 1000 + | £1.02 |
*price indicative
- RS Stock No.:
- 760-9982
- Mfr. Part No.:
- STP11NM60ND
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | FDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 450 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series FDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Width 4.6mm | ||
Height 15.75mm | ||
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