STMicroelectronics FDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 STP20NM60FD
- RS Stock No.:
- 920-8736
- Mfr. Part No.:
- STP20NM60FD
- Brand:
- STMicroelectronics
Save 42% when you buy 5000 units
Subtotal (1 tube of 50 units)*
£162.35
(exc. VAT)
£194.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.247 | £162.35 |
| 100 - 450 | £2.604 | £130.20 |
| 500 - 950 | £2.305 | £115.25 |
| 1000 - 4950 | £1.945 | £97.25 |
| 5000 + | £1.873 | £93.65 |
*price indicative
- RS Stock No.:
- 920-8736
- Mfr. Part No.:
- STP20NM60FD
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | FDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 192 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series FDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 192 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -65 °C | ||
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