STMicroelectronics FDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND
- RS Stock No.:
- 165-6595
- Mfr. Part No.:
- STD13NM60ND
- Brand:
- STMicroelectronics
Subtotal (1 reel of 2500 units)*
£3,992.50
(exc. VAT)
£4,790.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £1.597 | £3,992.50 |
*price indicative
- RS Stock No.:
- 165-6595
- Mfr. Part No.:
- STD13NM60ND
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Series | FDmesh | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 109 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 24.5 nC @ 10 V | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Series FDmesh | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 109 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 24.5 nC @ 10 V | ||
Length 6.6mm | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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