STMicroelectronics MDmesh DM2 N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STB18N60DM2

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Subtotal (1 reel of 1000 units)*

£1,082.00

(exc. VAT)

£1,298.00

(inc. VAT)

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Per Reel*
1000 +£1.082£1,082.00

*price indicative

RS Stock No.:
166-0942
Mfr. Part No.:
STB18N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

MDmesh DM2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

9.35mm

Width

10.4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

COO (Country of Origin):
CN

N-Channel MDmesh DM2 Series, STMicroelectronics


The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified


MOSFET Transistors, STMicroelectronics

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