Infineon HEXFET N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220AB IRFB3307ZPBF
- RS Stock No.:
- 165-7607
- Mfr. Part No.:
- IRFB3307ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£79.60
(exc. VAT)
£95.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
- Plus 999,999,850 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.592 | £79.60 |
| 100 - 200 | £1.337 | £66.85 |
| 250 - 450 | £1.242 | £62.10 |
| 500 - 950 | £1.162 | £58.10 |
| 1000 + | £1.067 | £53.35 |
*price indicative
- RS Stock No.:
- 165-7607
- Mfr. Part No.:
- IRFB3307ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 79 nC @ 10 V | |
| Length | 10.66mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.82mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 79 nC @ 10 V | ||
Length 10.66mm | ||
Number of Elements per Chip 1 | ||
Width 4.82mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
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