Name: Infineon HEXFET P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC IRF6216PBF
Brand: Infineon
SKU: 165-7563
Price: 1.21 GBP
Availability: Discontinued

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	2.2 A
	Maximum Drain Source Voltage	150 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	240 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	33 nC @ 10 V
	Length	5mm
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 2.2 A
	Maximum Drain Source Voltage 150 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 240 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 33 nC @ 10 V
	Length 5mm
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC IRF6216PBF

P-Channel Power MOSFET 100V to 150V, Infineon

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