Infineon HEXFET P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC IRF9328TRPBF

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

18 nC @ 4.5 V, 35 nC @ 10 V

Length

5mm

Width

4mm

Number of Elements per Chip

1

Height

1.5mm

Minimum Operating Temperature

-55 °C