P-Channel MOSFET, 23 A, 100 V, 3-Pin D2PAK Infineon IRF9540NSPBF

RS Stock No.:: 650-4198
Mfr. Part No.:: IRF9540NSPBF
Brand:: Infineon

P-Channel MOSFET, 23 A, 100 V, 3-Pin D2PAK Infineon IRF9540NSPBF

Price Each (In a Pack of 5)

£1.186

(exc. VAT)

£1.423

(inc. VAT)

Available to back order for despatch when stock is available

Units	Per unit	Per Pack*
5 - 20	£1.186	£5.93
25 +	£0.942	£4.71

*price indicative

RS Stock No.:: 650-4198
Mfr. Part No.:: IRF9540NSPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	117 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	97 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	9.65mm
Transistor Material	Si
Height	4.83mm
Minimum Operating Temperature	-55 °C