Infineon HEXFET P-Channel MOSFET, 9.2 A, 30 V, 8-Pin SOIC IRF9393TRPBF

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.2 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

4mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm