Infineon HEXFET P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC IRF9317TRPBF

Subtotal (1 reel of 4000 units)*

£988.00

(exc. VAT)

£1,184.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 16,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +£0.247£988.00

*price indicative

RS Stock No.:
168-7937
Mfr. Part No.:
IRF9317TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

31 nC @ 4.5 V, 61 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links