Infineon HEXFET P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF
- RS Stock No.:
- 915-4982
- Mfr. Part No.:
- IRF9321TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£9.06
(exc. VAT)
£10.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.453 | £9.06 |
| 100 - 480 | £0.292 | £5.84 |
| 500 - 980 | £0.263 | £5.26 |
| 1000 - 2480 | £0.234 | £4.68 |
| 2500 + | £0.215 | £4.30 |
*price indicative
- RS Stock No.:
- 915-4982
- Mfr. Part No.:
- IRF9321TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4mm | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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