Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 4000 units)*

£656.00

(exc. VAT)

£788.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000£0.164£656.00
8000 +£0.156£624.00

*price indicative

RS Stock No.:
262-6741
Mfr. Part No.:
IRF7606TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-3.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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