Infineon HEXFET P-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 IRLML9301TRPBF

Subtotal (1 pack of 20 units)*

£4.68

(exc. VAT)

£5.62

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 380 unit(s) ready to ship
  • Plus 240 unit(s) ready to ship from another location
  • Plus 140 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 +£0.234£4.68

*price indicative

Packaging Options:
RS Stock No.:
725-9366
Mfr. Part No.:
IRLML9301TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

64 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V

Length

3.04mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF


This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.

Features & Benefits


• Enhancement mode configuration allows for efficient operation
• High gate threshold voltage range enhances reliability
• Greater thermal resilience
• Optimised for Pulled Drain Current ratings, increasing performance reliability

Applications


• Used for power management in portable gadgets
• Ideal for automation control systems
• Utilised in audio amplifiers and signal processors
• Suitable for DC-DC converters in renewable energy systems
• Great fit for driving motors in robotic

What is the impact of the low on-resistance value on performance?


The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.

How does the enhancement mode benefit circuit design?


The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.

Can this component handle high temperatures?


Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links