MPN

Infineon HEXFET P-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 IRLML9301TRPBF

RS Stock No.:: 725-9366
Mfr. Part No.:: IRLML9301TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 IRLML9301TRPBF

Subtotal (1 pack of 20 units)*

£4.48

(exc. VAT)

£5.38

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

380 unit(s) ready to ship
Plus 260 unit(s) ready to ship from another location
Plus 54,420 unit(s) shipping from 10 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 +	£0.224	£4.48

*price indicative

RS Stock No.:: 725-9366
Mfr. Part No.:: IRLML9301TRPBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF

This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.

Features & Benefits

• Enhancement mode configuration allows for efficient operation
• High gate threshold voltage range enhances reliability
• Greater thermal resilience
• Optimised for Pulled Drain Current ratings, increasing performance reliability

Applications

• Used for power management in portable gadgets
• Ideal for automation control systems
• Utilised in audio amplifiers and signal processors
• Suitable for DC-DC converters in renewable energy systems
• Great fit for driving motors in robotic

What is the impact of the low on-resistance value on performance?

The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.

How does the enhancement mode benefit circuit design?

The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.

Can this component handle high temperatures?

Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	3.6 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	64 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1.3V
	Maximum Power Dissipation	1.3 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	1.4mm
	Typical Gate Charge @ Vgs	4.8 nC @ 4.5 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Length	3.04mm
	Number of Elements per Chip	1
	Height	1.02mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 3.6 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 64 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1.3V
	Maximum Power Dissipation 1.3 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 1.4mm
	Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Length 3.04mm
	Number of Elements per Chip 1
	Height 1.02mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

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