Infineon HEXFET P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF

Subtotal (1 reel of 4000 units)*

£1,196.00

(exc. VAT)

£1,436.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +£0.299£1,196.00

*price indicative

RS Stock No.:
165-5933
Mfr. Part No.:
IRF7241TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRF7241 is the 40V single P-channel HEXFET power MOSFET in a SO-8 package.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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