Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1
- RS Stock No.:
- 165-6894
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-6894
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.3 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TSDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 3.4mm | |
| Width | 3.4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.3 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TSDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 3.4mm | ||
Width 3.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.5 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon N-Channel MOSFET 200 V, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1
- Vishay ThunderFET N-Channel MOSFET 100 V, 6-Pin PowerPAK SC-70 SIA416DJ-T1-GE3
- Infineon N-Channel MOSFET 25 V, 8-Pin TSDSON-8 FL BSZ010NE2LS5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin TSDSON IAUZ40N06S5L050ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 8-Pin TSDSON BSZ067N06LS3GATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 30 V, 8-Pin TSDSON-8 FL BSZ0589NSATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TSDSON ISZ230N10NM6ATMA1