N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON Infineon BSZ12DN20NS3GATMA1

RS Stock No.:: 165-6894
Mfr. Part No.:: BSZ12DN20NS3GATMA1
Brand:: Infineon

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON Infineon BSZ12DN20NS3GATMA1

Price Each (On a Reel of 5000)

£0.325

(exc. VAT)

£0.39

(inc. VAT)

Available to back order for despatch when stock is available

Units	Per unit	Per Reel*
5000 +	£0.325	£1,625.00

*price indicative

RS Stock No.:: 165-6894
Mfr. Part No.:: BSZ12DN20NS3GATMA1
Brand:: Infineon

BSZ12DN20NS3 G OptiMOS-3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™ 3
Package Type	TSDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	3.4mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Length	3.4mm
Minimum Operating Temperature	-55 °C
Height	1.1mm

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON Infineon BSZ12DN20NS3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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