N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON Infineon BSZ12DN20NS3GATMA1
- RS Stock No.:
- 165-6894
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Brand:
- Infineon
Available to back order for despatch when stock is available
Added
Price Each (On a Reel of 5000)
£0.325
(exc. VAT)
£0.39
(inc. VAT)
| Units | Per unit | Per Reel* |
| 5000 + | £0.325 | £1,625.00 |
| *price indicative | ||
- RS Stock No.:
- 165-6894
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.3 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TSDSON |
| Series | OptiMOS 3 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 3.4mm |
| Length | 3.4mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 165-6894
- Mfr. Part No.:
- BSZ12DN20NS3GATMA1
- Brand:
- Infineon