Infineon OptiMOS™ 3 N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ050N03MSGATMA1
- RS Stock No.:
- 827-5246
- Mfr. Part No.:
- BSZ050N03MSGATMA1
- Brand:
- Infineon
Subtotal (1 pack of 25 units)*
£8.375
(exc. VAT)
£10.05
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
25 + | £0.335 | £8.38 |
*price indicative
- RS Stock No.:
- 827-5246
- Mfr. Part No.:
- BSZ050N03MSGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 30 V | |
Series | OptiMOS™ 3 | |
Package Type | TSDSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 5.7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 48 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 3.4mm | |
Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Width | 3.4mm | |
Height | 1.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ 3 | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.4mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.4mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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