Infineon ISZ080N10 Type N-Channel MOSFET, 75 A, 100 V, 8-Pin TSDSON ISZ080N10NM6ATMA1
- RS Stock No.:
- 235-4883
- Mfr. Part No.:
- ISZ080N10NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.15
(exc. VAT)
£9.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 4,550 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.63 | £8.15 |
| 50 - 120 | £1.434 | £7.17 |
| 125 - 245 | £1.352 | £6.76 |
| 250 - 495 | £1.256 | £6.28 |
| 500 + | £1.158 | £5.79 |
*price indicative
- RS Stock No.:
- 235-4883
- Mfr. Part No.:
- ISZ080N10NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | ISZ080N10 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.04mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series ISZ080N10 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.04mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineons leading thin wafer technology is enabling significant performance benefits.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
Related links
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TSDSON ISZ080N10NM6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TSDSON ISZ230N10NM6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC080N10NM6ATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin TSDSON-8 FL BSZ010NE2LS5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin TSDSON IAUZ40N06S5L050ATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin TSDSON-8 FL BSZ0500NSIATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin TSDSON ISZ040N03L5ISATMA1
- Infineon N-Channel MOSFET 100 V, 8-Pin TSDSON-8 FL BSZ0803LSATMA1


