Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1

Subtotal (1 reel of 5000 units)*

£2,735.00

(exc. VAT)

£3,280.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.547£2,735.00

*price indicative

RS Stock No.:
170-2290
Mfr. Part No.:
BSC12DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

5.35mm

Maximum Operating Temperature

+150 °C

Width

6.35mm

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Number of Elements per Chip

1

Height

1.1mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement

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