Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1
- RS Stock No.:
- 170-2290
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,735.00
(exc. VAT)
£3,280.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 12 February 2026
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.547 | £2,735.00 |
*price indicative
- RS Stock No.:
- 170-2290
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 11.3 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TDSON | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 125 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 50 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Length | 5.35mm | |
Maximum Operating Temperature | +150 °C | |
Width | 6.35mm | |
Typical Gate Charge @ Vgs | 6.5 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.3 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5.35mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.35mm | ||
Typical Gate Charge @ Vgs 6.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
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