Infineon OptiMOS™ 3 N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON BSC500N20NS3GATMA1
- RS Stock No.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£10.80
(exc. VAT)
£13.00
(inc. VAT)
FREE delivery for orders over £50.00
- 7,230 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.08 | £10.80 |
50 - 90 | £0.864 | £8.64 |
100 - 240 | £0.81 | £8.10 |
250 - 490 | £0.756 | £7.56 |
500 + | £0.702 | £7.02 |
*price indicative
- RS Stock No.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 24 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TDSON | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 50 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 96 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Length | 5.35mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
Width | 6.35mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5.35mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC500N20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC350N20NSFDATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC320N20NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TDSON BSC900N20NS3GATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC151N20NM6ATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC130N20NM6ATMA1