Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1
- RS Stock No.:
- 171-1952
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£9.44
(exc. VAT)
£11.33
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.944 | £9.44 |
| 50 - 90 | £0.897 | £8.97 |
| 100 - 240 | £0.807 | £8.07 |
| 250 - 490 | £0.726 | £7.26 |
| 500 + | £0.691 | £6.91 |
*price indicative
- RS Stock No.:
- 171-1952
- Mfr. Part No.:
- BSC12DN20NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.3 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.35mm | |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V | |
| Width | 6.35mm | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.3 A | ||
Maximum Drain Source Voltage 200 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 5.35mm | ||
Typical Gate Charge @ Vgs 6.5 nC @ 10 V | ||
Width 6.35mm | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
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