Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON BSC12DN20NS3GATMA1

Save 26% when you buy 500 units

Subtotal (1 pack of 10 units)*

£9.44

(exc. VAT)

£11.33

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.944£9.44
50 - 90£0.897£8.97
100 - 240£0.807£8.07
250 - 490£0.726£7.26
500 +£0.691£6.91

*price indicative

Packaging Options:
RS Stock No.:
171-1952
Mfr. Part No.:
BSC12DN20NS3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Series

OptiMOS™ 3

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Length

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

6.35mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.1mm

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement

Related links