Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£9.44

(exc. VAT)

£11.33

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.944£9.44
50 - 90£0.897£8.97
100 - 240£0.807£8.07
250 - 490£0.726£7.26
500 +£0.691£6.91

*price indicative

Packaging Options:
RS Stock No.:
171-1952
Mfr. Part No.:
BSC12DN20NS3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSC12DN20NS3 G

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Width

6.35 mm

Height

1.1mm

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

Related links