Infineon HEXFET N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 IRFL4315TRPBF

Subtotal (1 reel of 2500 units)*

£570.00

(exc. VAT)

£685.00

(inc. VAT)

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RS Stock No.:
165-5560
Mfr. Part No.:
IRFL4315TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

150 V

Package Type

SOT-223

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

3.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12 nC @ 10 V

Length

6.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.8mm

COO (Country of Origin):
MY

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF


This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.

Features & Benefits


• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection

Applications


• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance

What is the significance of the low Rds(on) value?


A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.

How does the wide temperature range affect usage?


The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.

Can it be used in both high and low-frequency applications?


Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.

What should be considered for installation?


Proper circuit layout and thermal management should be taken into account to optimise performance during installation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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