Infineon HEXFET N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- RS Stock No.:
- 165-5560
- Mfr. Part No.:
- IRFL4315TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£570.00
(exc. VAT)
£685.00
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.228 | £570.00 |
*price indicative
- RS Stock No.:
- 165-5560
- Mfr. Part No.:
- IRFL4315TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.6 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | SOT-223 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 185 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 2.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Width | 3.7mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Length | 6.7mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.8mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 6.7mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
- COO (Country of Origin):
- MY
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF
Features & Benefits
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
Applications
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
What is the significance of the low Rds(on) value?
How does the wide temperature range affect usage?
Can it be used in both high and low-frequency applications?
What should be considered for installation?
Related links
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL014NTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL024NTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRFL4105TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL2705TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V SOT-223 (TO-261AA) IRFL4310TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRF3415PBF
- Infineon HEXFET N-Channel MOSFET 150 V TSOP-6 IRF5802TRPBF