Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-E3
- RS Stock No.:
- 146-4448
- Mfr. Part No.:
- TP0610K-T1-E3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£345.00
(exc. VAT)
£414.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 6,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.115 | £345.00 |
*price indicative
- RS Stock No.:
- 146-4448
- Mfr. Part No.:
- TP0610K-T1-E3
- Brand:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 185 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -3V | |
| Minimum Gate Threshold Voltage | -1V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 2.64mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Forward Diode Voltage | -1.4V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 185 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -3V | ||
Minimum Gate Threshold Voltage -1V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 2.64mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.7 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Forward Diode Voltage -1.4V | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
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