IXYS HiperFET N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXFA80N25X3
- RS Stock No.:
- 146-4403
- Distrelec Article No.:
- 302-53-297
- Mfr. Part No.:
- IXFA80N25X3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£8.49
(exc. VAT)
£10.19
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 200 unit(s) shipping from 08 September 2025
- Plus 999,999,799 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £8.49 |
| 5 - 9 | £7.28 |
| 10 - 24 | £6.92 |
| 25 + | £6.63 |
*price indicative
- RS Stock No.:
- 146-4403
- Distrelec Article No.:
- 302-53-297
- Mfr. Part No.:
- IXFA80N25X3
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | HiperFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 390 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 10.41mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 83 @ 10 V nC | |
| Width | 11.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 250 V | ||
Series HiperFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 390 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 83 @ 10 V nC | ||
Width 11.05mm | ||
Maximum Operating Temperature +150 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
Related links
- IXYS HiperFET N-Channel MOSFET 250 V, 3-Pin D2PAK IXFA80N25X3
- IXYS HiperFET N-Channel MOSFET 250 V, 3-Pin TO-247 IXFH80N25X3
- IXYS HiperFET N-Channel MOSFET 250 V, 3-Pin TO-220 IXFP80N25X3
- IXYS HiperFET N-Channel MOSFET 650 V, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET N-Channel MOSFET 500 V, 3-Pin TO-264AA IXFK48N50
- IXYS HiperFET N-Channel MOSFET 650 V, 3-Pin TO-247 IXFH60N65X2
- IXYS HiperFET N-Channel MOSFET 850 V, 3-Pin PLUS264 IXFB90N85X
- IXYS HiperFET N-Channel MOSFET 650 V, 3-Pin TO-268HV IXFT60N65X2HV