IXYS HiperFET N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

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RS Stock No.:
146-4378
Distrelec Article No.:
302-53-402
Mfr. Part No.:
IXFT60N65X2HV
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Package Type

TO-268HV

Series

HiperFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

780 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

108 nC @ 10 V

Width

15.15mm

Length

16.05mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

5.1mm

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