IXYS HiperFET N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV
- RS Stock No.:
- 146-4378
- Distrelec Article No.:
- 302-53-402
- Mfr. Part No.:
- IXFT60N65X2HV
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£5.33
(exc. VAT)
£6.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 17 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £5.33 |
| 5 - 9 | £5.03 |
| 10 + | £4.86 |
*price indicative
- RS Stock No.:
- 146-4378
- Distrelec Article No.:
- 302-53-402
- Mfr. Part No.:
- IXFT60N65X2HV
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | HiperFET | |
| Package Type | TO-268HV | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 780 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 15.15mm | |
| Length | 16.05mm | |
| Typical Gate Charge @ Vgs | 108 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.1mm | |
| Forward Diode Voltage | 1.4V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 650 V | ||
Series HiperFET | ||
Package Type TO-268HV | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 780 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 15.15mm | ||
Length 16.05mm | ||
Typical Gate Charge @ Vgs 108 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 5.1mm | ||
Forward Diode Voltage 1.4V | ||
Related links
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