IXYS HiperFET N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

Subtotal (1 tube of 30 units)*

£175.11

(exc. VAT)

£210.12

(inc. VAT)

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  • 999,999,990 unit(s) shipping from 11 September 2026
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Units
Per unit
Per Tube*
30 +£5.837£175.11

*price indicative

RS Stock No.:
146-4235
Mfr. Part No.:
IXFT60N65X2HV
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

TO-268HV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

780 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.05mm

Typical Gate Charge @ Vgs

108 nC @ 10 V

Width

15.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

5.1mm

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