IXYS HiperFET N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

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Subtotal (1 tube of 30 units)*

£178.05

(exc. VAT)

£213.66

(inc. VAT)

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30 +£5.935£178.05

*price indicative

RS Stock No.:
146-4235
Mfr. Part No.:
IXFT60N65X2HV
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

TO-268HV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

780 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

16.05mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

15.15mm

Typical Gate Charge @ Vgs

108 nC @ 10 V

Height

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, announces an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications.The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, and LED lighting.These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.

Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings

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