N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXYS IXFH60N65X2

RS Stock No.:: 146-4234
Mfr. Part No.:: IXFH60N65X2
Brand:: IXYS

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXYS IXFH60N65X2

38 In stock - FREE next working day delivery available

Price Each (In a Tube of 30)

£8.399

(exc. VAT)

£10.079

(inc. VAT)

Units	Per unit	Per Tube*
30 - 120	£8.399	£251.97
150 - 270	£7.576	£227.28
300 +	£7.332	£219.96

*price indicative

RS Stock No.:: 146-4234
Mfr. Part No.:: IXFH60N65X2
Brand:: IXYS

Technical Reference

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

Low R and Q
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	650 V
Series	HiperFET
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	780 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Length	16.13mm
Typical Gate Charge @ Vgs	108 nC @ 10 V
Width	5.21mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	21.34mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.4V