IXYS HiperFET N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXFH60N65X2

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Subtotal (1 tube of 30 units)*

£199.08

(exc. VAT)

£238.89

(inc. VAT)

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Temporarily out of stock
  • 270 unit(s) shipping from 10 December 2025
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Units
Per unit
Per Tube*
30 - 120£6.636£199.08
150 - 270£6.112£183.36
300 +£5.959£178.77

*price indicative

RS Stock No.:
146-4234
Mfr. Part No.:
IXFH60N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

HiperFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

780 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

16.13mm

Typical Gate Charge @ Vgs

108 nC @ 10 V

Width

5.21mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

21.34mm

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series


The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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