IXYS HiperFET N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT-227 IXFN170N65X2

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Subtotal (1 tube of 10 units)*

£413.66

(exc. VAT)

£496.39

(inc. VAT)

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  • 999,999,990 unit(s) shipping from 11 September 2026
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Units
Per unit
Per Tube*
10 +£41.366£413.66

*price indicative

RS Stock No.:
146-4241
Mfr. Part No.:
IXFN170N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.17 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

25.07mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

434 @ 10 V nC

Length

38.23mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Height

9.6mm

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