IXYS HiperFET N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT-227 IXFN170N65X2

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Subtotal (1 tube of 10 units)*

£420.63

(exc. VAT)

£504.76

(inc. VAT)

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Per Tube*
10 +£42.063£420.63

*price indicative

RS Stock No.:
146-4241
Mfr. Part No.:
IXFN170N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

650 V

Package Type

SOT-227

Series

HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.17 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

25.07mm

Typical Gate Charge @ Vgs

434 @ 10 V nC

Maximum Operating Temperature

+150 °C

Length

38.23mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings

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