IXYS HiperFET N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXFA80N25X3

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Subtotal (1 tube of 50 units)*

£267.30

(exc. VAT)

£320.75

(inc. VAT)

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  • 200 unit(s) ready to ship
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Per unit
Per Tube*
50 +£5.346£267.30

*price indicative

RS Stock No.:
146-4231
Mfr. Part No.:
IXFA80N25X3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Series

HiperFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

11.05mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.83mm

Lowest on-resistance RDS(ON) and gate charge Qg
Fast soft recovery body diode dv/dt ruggedness
Superior avalanche capability
International standard packages
Battery chargers for light electric vehicles
Synchronous rectification in switching power supplies
Motor control
DC-DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
High efficiency
High power density
Improved system reliability
Easy to design in

200 MHz/330 DMIPS, MIPS32 microAptiv core
Dual Panel Flash for live update support
12-bit, 18 MSPS, 45-channel ADC module
Memory Management Unit for optimum embedded OS execution
microMIPS mode for up to 35% code compression
CAN, UART, I2C, PMP, EBI, SQI & Analog Comparators
SPI/I2S interfaces for audio processing and playback
Hi-Speed USB Device/Host/OTG
10/100 Mbps Ethernet MAC with MII and RMII interface
Advanced Memory Protection
2MB Flash memory (plus an additional 160 KB of Boot Flash)
640KB SRAM memory

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