onsemi Single QFET 1 N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- RS Stock No.:
- 146-2064
- Mfr. Part No.:
- FQB4N80TM
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£473.60
(exc. VAT)
£568.00
(inc. VAT)
FREE delivery for orders over £60.00
Being discontinued
- Final 800 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £0.592 | £473.60 |
*price indicative
- RS Stock No.:
- 146-2064
- Mfr. Part No.:
- FQB4N80TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.13W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series QFET | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.13W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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