onsemi QFET N-Channel MOSFET, 3.9 A, 800 V, 3-Pin D2PAK FQB4N80TM
- RS Stock No.:
- 146-2064
- Mfr. Part No.:
- FQB4N80TM
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£473.60
(exc. VAT)
£568.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 800 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 + | £0.592 | £473.60 |
*price indicative
- RS Stock No.:
- 146-2064
- Mfr. Part No.:
- FQB4N80TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.9 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | D2PAK (TO-263) | |
Series | QFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.6 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 3.13 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.6 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 3.13 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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