onsemi QFET N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220AB FQP44N10

View all MOSFETs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
671-5111
Mfr. Part No.:
FQP44N10
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

146 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.7mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.4mm

COO (Country of Origin):
MY

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links