onsemi Single QFET 1 Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220AB FQP44N10
- RS Stock No.:
- 671-5111
- Mfr. Part No.:
- FQP44N10
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 671-5111
- Mfr. Part No.:
- FQP44N10
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25, -25V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Width | 4.7mm | |
| Length | 10.1mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25, -25V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Width 4.7mm | ||
Length 10.1mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Single QFET 1 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- onsemi Single QFET 1 Type P 3.4 A 3-Pin TO-220F FQPF5P20
- Infineon Single OptiMOS 3 1 Type N 43 A 3-Pin TO-220FP IPA093N06N3GXKSA1
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI4410ZPBF
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP180N10N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi Single 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8FL NTMFS4936NT1G