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P-Channel MOSFET, 9.4 A, 60 V, 3-Pin IPAK ON Semiconductor FQU11P06TU

1680 In stock - FREE next working day delivery available
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RS Stock No.:
Mfr. Part No.:
ON Semiconductor
UnitsPer unitPer Tube*
70 +£0.492£34.44
*price indicative

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Channel TypeP
Maximum Continuous Drain Current9.4 A
Maximum Drain Source Voltage60 V
Package TypeIPAK (TO-251)
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance185 mΩ
Channel ModeEnhancement
Minimum Gate Threshold Voltage2V
Maximum Power Dissipation2.5 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-30 V, +30 V
Number of Elements per Chip1
Typical Gate Charge @ Vgs13 nC @ 10 V
Transistor MaterialSi
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C