onsemi QFET P-Channel MOSFET, 3.7 A, 200 V, 3-Pin IPAK FQU5P20TU

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Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
145-4405
Mfr. Part No.:
FQU5P20TU
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

200 V

Series

QFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Length

6.8mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

2.5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

7.57mm

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


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ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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