onsemi P-Channel MOSFET, 11.5 A, 200 V, 3-Pin D2PAK FQB12P20TM

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Subtotal (1 pack of 5 units)*

£9.32

(exc. VAT)

£11.185

(inc. VAT)

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  • Plus 10 unit(s) shipping from 13 October 2025
  • Plus 245 unit(s) shipping from 20 October 2025
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Per Pack*
5 - 45£1.864£9.32
50 - 95£1.606£8.03
100 - 495£1.394£6.97
500 +£1.224£6.12

*price indicative

Packaging Options:
RS Stock No.:
671-0860
Mfr. Part No.:
FQB12P20TM
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

470 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

3.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.67mm

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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