onsemi P-Channel MOSFET, 11.5 A, 200 V, 3-Pin D2PAK FQB12P20TM
- RS Stock No.:
- 671-0860
- Mfr. Part No.:
- FQB12P20TM
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£9.32
(exc. VAT)
£11.185
(inc. VAT)
FREE delivery for orders over £50.00
- 10 unit(s) ready to ship
- Plus 245 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.864 | £9.32 |
50 - 95 | £1.606 | £8.03 |
100 - 495 | £1.394 | £6.97 |
500 + | £1.224 | £6.12 |
*price indicative
- RS Stock No.:
- 671-0860
- Mfr. Part No.:
- FQB12P20TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 11.5 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 470 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 3.13 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Width | 9.65mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 11.5 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 470 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 3.13 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
Features and Benefits:
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
Applications:
DC/DC converter
Battery protection
Power management control
DC motor control
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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