onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

RS Stock No.:: 671-0873
Mfr. Part No.:: FQB27P06TM
Brand:: onsemi

onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

Bulk discount available

Subtotal (1 pack of 5 units)*

£9.89

(exc. VAT)

£11.87

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

150 unit(s) shipping from 02 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£1.978	£9.89
50 - 95	£1.706	£8.53
100 - 495	£1.478	£7.39
500 +	£1.30	£6.50

*price indicative

RS Stock No.:: 671-0873
Mfr. Part No.:: FQB27P06TM
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	60V
	Series	QFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.75W
	Forward Voltage Vf	-4V
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 60V
	Series QFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.75W
	Forward Voltage Vf -4V
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.