onsemi QFET P-Channel MOSFET, 27 A, 60 V, 3-Pin TO-220AB FQP27P06
- RS Stock No.:
- 671-5064
- Mfr. Part No.:
- FQP27P06
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£9.94
(exc. VAT)
£11.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 260 unit(s) ready to ship
- Plus 15 unit(s) ready to ship from another location
- Plus 2,425 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.988 | £9.94 |
*price indicative
- RS Stock No.:
- 671-5064
- Mfr. Part No.:
- FQP27P06
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 27 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Length | 10.1mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Length 10.1mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
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