onsemi QFET P-Channel MOSFET, 27 A, 60 V, 3-Pin TO-220AB FQP27P06
- RS Stock No.:
- 178-4752
- Mfr. Part No.:
- FQP27P06
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£57.15
(exc. VAT)
£68.60
(inc. VAT)
FREE delivery for orders over £50.00
- 2,400 unit(s) ready to ship
- Plus 999,997,550 unit(s) shipping from 25 December 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.143 | £57.15 |
100 - 200 | £1.075 | £53.75 |
250 + | £1.029 | £51.45 |
*price indicative
- RS Stock No.:
- 178-4752
- Mfr. Part No.:
- FQP27P06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 27 A | |
Maximum Drain Source Voltage | 60 V | |
Series | QFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 120 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Width | 4.7mm | |
Length | 10.1mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 60 V | ||
Series QFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Length 10.1mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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