onsemi QFET P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220 FQPF27P06
- RS Stock No.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
£20.60
(exc. VAT)
£24.70
(inc. VAT)
FREE delivery for orders over £50.00
- 130 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 + | £2.06 | £20.60 |
*price indicative
- RS Stock No.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 19 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220 | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 120 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Width | 4.7mm | |
Transistor Material | Si | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 16.3mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.3mm | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220F FQPF27P06
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220AB FQP27P06
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220F FQPF47P06
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220AB FQP17P06
- onsemi QFET P-Channel MOSFET 100 V, 3-Pin TO-220AB FQP17P10
- onsemi QFET P-Channel MOSFET 500 V, 3-Pin TO-220AB FQP3P50
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin TO-220F FQPF5P20
- onsemi QFET P-Channel MOSFET 250 V, 3-Pin TO-3PN FQA9P25